GRAPHENE FET CHIP S20

Code: GRFETS20-1EA D2-231

Application

BioelectronicsFET based sensor research for active materials deposited on grapheneClinical applicationsBiosensors

GFET-S20 chip can be used as a biosensor a...


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Your Price
€608.40 EACH
€748.33 inc. VAT

Application

BioelectronicsFET based sensor research for active materials deposited on grapheneClinical applicationsBiosensors

GFET-S20 chip can be used as a biosensor and a chemical sensor for biological applications.

Features and Benefits

Device Features: State-of-the-art GFETs utilizing consistently high-quality CVD monolayer graphene Metallic contacts and metal/graphene interface are encapsulated to avoid degradation and reduce leakage current in liquid environment Perfect platform device for new sensor research and development 12 individual GFETs per chip A central gate electrode

General description

Device configuration:The graphene FET-S20 chip is designed for measurements in liquid medium. This chip provides 12 graphene devices, with encapsulation on the metal pads to avoid degradation and reduce leakage currents, and the probe pads located near the periphery of the chip. It also includes a non-encapsulated electrode at the center of the chip, which allows liquid gating without the need of an external gate electrode.

Graphene FET chip (GFET-S20 chip) is a graphene based field effect transistor which can be coated on silicon substrate by atmospheric pressure chemical vapor deposition (CVD). It also has similar gate insulators in the source and drain.

descriptionEncapsulation: 50 nm Al2O3 + 100 nm Si3N4, Gate oxide materials: 90 nm SiO2, Resistivity of substrate: 1-10 Ω·cmMetallization: Chromium/Gold-Palladium 2/50 nm, Dirac point: ﹤ 50 VYield >75%, Graphene field-effect mobility: >1000 cm2/V·s, Monolayer CVD grown Graphene based 2-probe field effect transistors (FET)., Absolute Maximum RatingsMaximum gate-source voltage: ± 50 VMaximum temperature rating: 150 °CMaximum drain-source current density: 107 A/cm2, Chip dimensions: 10 mm x 10 mm, Number of devices per chip: 12, Chip thickness: 675 µm
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